Metal Gate Technology for Advanced CMOS Devices

由 L Wu 著作 · 2013 — One step from typical CMOS process flow is the source/drain (S/D) activation annealing, which the gate stack must undergo. The typical S/D ...

A metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel ...

The MPG loop is an important process for an advanced technology node, for example, N10 process flow. The MPG loop can damage the gate metal by undesirably ...

This thesis examines possible metal gate materials for improving the performance of the gate stack and discusses process integration as well as improved ...

Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve ...

由 J Robertson 著作 · 被引用 734 次 — The gate first process (Fig 10a) follows the same process flow as with a SiO2 gate oxide [62]. In gate first, we sequentially deposit a gate oxide layer, gate ...

Wang et al. studied the ALD W on TiN using SiH4 and B2H6 as the metal for filling the high aspect ratio gap of the replacement gate [88, 89]. A good gap filling ...

由 S Mukesh 著作 · 2022 · 被引用 24 次 — In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET are reviewed. These innovations span enablement ...

Referring to FIG. 2 , a block/flow diagram shows a method for polishing for forming replacement high-k metal gate structures. In one embodiment, three polishing ...